Display device and method of manufacturing the same

ABSTRACT

A display device includes a substrate including a display area and a pad area disposed outside a display area in plan view, a plurality of pixels disposed in a display area on a substrate, at least one display pad electrode disposed in a pad area on a substrate, a thin film encapsulation layer disposed on a display area on a substrate and covering the plurality of pixels, a protective film disposed on a thin film encapsulation layer and including an inorganic material, a light transmitting film disposed on a protective film and including a plurality of openings exposing a portion of a protective film, and a light blocking pattern that fills each of the plurality of openings and are disposed on a protective film.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims priority to and benefits of Korean PatentApplication No. 10-2022-0090462 under 35 U.S.C. § 119, filed on Jul. 21,2022 in the Korean Intellectual Property Office (KIPO), the entirecontents of which are herein incorporated by reference.

BACKGROUND 1. Technical Field

Embodiments relate to a display device and method of manufacturing thedisplay device.

2. Description of the Related Art

A flat panel display is being used as a display device and has generallyreplaced the cathode ray tube display due to characteristics such aslight weight and thinness. Representative examples of such flat paneldisplay devices include a liquid crystal display device and an organiclight emitting display device.

The display device may include a display panel including pixels togenerate an image, and a circuit board to provide a driving signal tothe display panel. The circuit board may be electrically connected topad electrodes of the display panel. When the pad electrodes aredamaged, reliability of the display device may be reduced.

SUMMARY

Embodiments provide a display device with improved reliability.

Embodiments provide a method of manufacturing the display device withimproved reliability.

A display device according to an embodiment may include a substrateincluding a display area and a pad area disposed outside the displayarea in plan view, a plurality of pixels disposed in the display area onthe substrate, at least one display pad electrode disposed in the padarea on the substrate, a thin film encapsulation layer disposed on thedisplay area on the substrate and covering the plurality of pixels, aprotective film disposed on the thin film encapsulation layer andincluding an inorganic material, a light transmitting film disposed onthe protective film and including a plurality of openings exposing aportion of the protective film, and a light blocking pattern that fillseach of the plurality of openings and are disposed on the protectivefilm.

In an embodiment, an etch rate of the protective film may be lower thanan etch rate of the light transmitting film in a same etching process.

In an embodiment, the protective film may include at least one ofsilicon oxide, silicon nitride, and silicon oxynitride.

In an embodiment, each of the plurality of pixels may include aplurality of sub pixels, and the light blocking patterns may be spacedapart from the plurality of sub pixels in plan view.

In an embodiment, the display device may further include a transparentinorganic film pattern disposed in the display area on the lighttransmitting film and spaced apart from the plurality of openings inplan view.

In an embodiment, the display device may further include a sensing layerdisposed between the thin film encapsulation layer and the protectivefilm and including at least one touch electrode and at least one touchpad electrode disposed in the pad area on the substrate.

A method of manufacturing a display device according to an embodimentmay include forming a pixel in a display area on a substrate and atleast one display pad electrode in a pad area disposed outside thedisplay area in plan view, forming a thin film encapsulation layercovering the pixel in the display area on the substrate, forming aprotective film including an inorganic material and covering the thinfilm encapsulation layer and the display pad electrode on the displayarea and the pad area on the substrate, forming a light transmittingfilm including a plurality of openings exposing a portion of theprotective film in the display area on the protective film, and forminga light blocking pattern disposed in each of the plurality of openings.

In an embodiment, the forming of the light transmitting film may includeforming a preliminary light transmitting film on the display area on theprotective film, forming a transparent inorganic film pattern on thepreliminary light transmitting film, forming a metal pattern covering anupper surface of the transparent inorganic film pattern and an uppersurface of the protective film in the display area and the pad area onthe substrate, and forming the plurality of openings by etching thepreliminary light transmitting film using the transparent inorganic filmpattern and the metal pattern as a mask.

In an embodiment, in the etching the preliminary light transmittingfilm, the protective film may have a first etch rate and the preliminarylight transmitting film may have a second etch rate, and the second etchrate may be lower than the first etch rate.

In an embodiment, the protective film may include at least one ofsilicon oxide, silicon nitride, and silicon oxynitride.

In an embodiment, after forming the plurality of openings, the metalpattern may be removed.

In an embodiment, after forming the light blocking pattern, theprotective film in the pad area may be selectively removed to expose thedisplay pad electrode.

In an embodiment, the protective film in the pad area may be selectivelyremoved by a whole surface etching process.

A method of manufacturing a display device according to anotherembodiment may include forming a pixel in a display area on a substrateand at least one display pad electrode in a pad area disposed outsidethe display area in plan view, forming a thin film encapsulation layercovering the pixel in the display area on the substrate, forming asensing layer including at least one sensing electrode in the displayarea on the thin film encapsulation layer and at least one touch padelectrode disposed in the pad area, forming a protective film includingan inorganic material and covering the sensing layer, the display padelectrode, and the touch pad electrode on the display area and the padarea on the substrate, forming a light transmitting film including aplurality of openings exposing a portion of the protective film in thedisplay area on the protective film, and forming a light blockingpattern disposed in each of the plurality of openings.

In an embodiment, the forming of the light transmitting film may includeforming a preliminary light transmitting film on the display area on theprotective film, forming a transparent inorganic film pattern on thepreliminary light transmitting film, forming a metal pattern covering anupper surface of the transparent inorganic film pattern and an uppersurface of the protective film in the display area and the pad area onthe substrate, and forming the plurality of openings by etching thepreliminary light transmitting film using the transparent inorganic filmpattern and the metal pattern as a mask.

In an embodiment, in the etching the preliminary light transmittingfilm, the protective film may have a first etch rate and the preliminarylight transmitting film may have a second etch rate, and the second etchrate may be lower than the first etch rate.

In an embodiment, the protective film may include at least of siliconoxide, silicon nitride, and silicon oxynitride.

In an embodiment, after forming the plurality of openings, the metalpattern may be removed.

In an embodiment, after forming the light blocking pattern, theprotective film in the pad area may be selectively removed to expose thedisplay pad electrode and the touch pad electrode.

In an embodiment, the protective film in the pad area may be selectivelyremoved by a whole surface etching process.

According to the method of manufacturing the display device according tothe disclosure, the light blocking patterns for controlling the viewingangle may be internalized in the display panel. Accordingly, powerconsumption of the display panel may be reduced, a thickness of thedisplay panel may be reduced, and a manufacturing cost of the displaypanel may be reduced.

Also, in case that the light transmitting film is formed using anetching process to internalize the light blocking patterns in thedisplay panel, the pad electrodes may be covered by the protective film.Accordingly, damage to the pad electrodes due to the etching process maybe prevented. Accordingly, the reliability of the display device may beimproved.

It is to be understood that both the foregoing general description andthe following detailed description are only illustrative and explanatoryand are intended to provide further explanation of the disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

Illustrative, non-limiting embodiments will be more clearly understoodfrom the following detailed description taken in conjunction with theaccompanying drawings.

FIG. 1 is a schematic plan view illustrating a display device accordingto an embodiment.

FIG. 2 is a schematic plan view illustrating an arrangement of pixels ofthe display device of FIG. 1 .

FIG. 3 is a schematic cross-sectional view taken along line I-I′ of FIG.1 is.

FIGS. 4 to 11 are schematic cross-sectional views illustrating anexample of a method of manufacturing the display device of FIG. 1 .

FIG. 12 is a schematic plan view illustrating a display device accordingto another embodiment.

FIG. 13 is a schematic cross-sectional view taken along line II-If ofFIG. 12 .

FIGS. 14 to 21 are schematic cross-sectional views illustrating anexample of a method of manufacturing the display device of FIG. 12 .

FIG. 22 is a schematic plan view illustrating pixels of a display deviceaccording to still another embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The disclosure now will be described more fully hereinafter withreference to the accompanying drawings, in which various embodiments areshown. This disclosure may, however, be embodied in many differentforms, and should not be construed as limited to the embodiments setforth herein. Rather, these embodiments are provided so that thisdisclosure will be thorough and complete, and will fully convey thescope of the disclosure to those skilled in the art. Like referencenumerals refer to like elements throughout.

As used herein, the singular forms, “a,” “an,” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

In the specification and the claims, the term “and/or” is intended toinclude any combination of the terms “and” and “or” for the purpose ofits meaning and interpretation. For example, “A and/or B” may beunderstood to mean any combination including “A, B, or A and B.” Theterms “and” and “or” may be used in the conjunctive or disjunctive senseand may be understood to be equivalent to “and/or.”

In the specification and the claims, the phrase “at least one of” isintended to include the meaning of “at least one selected from the groupof” for the purpose of its meaning and interpretation. For example, “atleast one of A and B” may be understood to mean any combinationincluding “A, B, or A and B.”

When an element is described as being “on” another element, it can bedirectly on the other element, or intervening elements (e.g., layers)may be present.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which the disclosure pertains. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

FIG. 1 is a schematic plan view illustrating a display device accordingto an embodiment.

Referring to FIG. 1 , a display device 10 according to an embodiment mayinclude a display panel DP and a circuit board CB.

The display panel DP may have a rectangular planar shape. For example,the display panel DP may have a rectangular planar shape having a shortside in the first direction D1 and a long side in the second directionD2 perpendicular to the first direction D1. An edge where the short sideand the long side meet may be formed at a right angle or have apredetermined or given curvature. However, the disclosure is notnecessarily limited thereto, and the display panel DP may have a planarshape other than a rectangle, such as a polygon, a circle, an oval, orthe like.

The display panel DP may generate an image. The display panel DP mayinclude pixels PX for generating the image. Each of the pixels PX mayinclude first to third sub pixels SPX1, SPX2, and SPX3. In anembodiment, the first sub pixel SPX1 may be a red sub pixel emitting redlight, the second sub pixel SPX2 may be a green sub pixel emitting greenlight, and the third sub pixel SPX3 may be a blue sub pixel emittingblue light. However, the color of the light emitted by the first tothird sub pixels SPX1, SPX2, and SPX3 is not limited thereto. Also,although it is illustrated that the number of sub pixels included ineach of the pixels PX is three in FIG. 1 , the disclosure is not limitedthereto. For example, each of the pixels PX may further include a fourthsub-pixel emitting white light.

Each of the first to third sub pixels SPX1, SPX2, and SPX3 may includeat least one thin film transistor and a light emitting device. The imagemay be generated by combining light emitted from each of the first tothird sub pixels SPX1, SPX2, and SPX3. For example, the display panel DPmay provide the generated image in a third direction D3.

The display panel DP may include a display area DA and a non-displayarea NDA. Pixels PX may be disposed in the display area DA. Thenon-display area NDA may be positioned outside the display area DA. Forexample, the non-display area NDA may surround the display area DA inplan view.

The non-display area NDA may include a pad area PA in which display padelectrodes PE-D are disposed. The pad area PA may be positioned outsidethe display area DA. Although only one pad area PA is illustrated inFIG. 1 , the non-display area NDA may include multiple pad areas PA.

The circuit board CB may be attached to one side of the display panelDP. For example, the circuit board CB may be attached to the displaypanel DP so that an end overlaps the pad area PA. The circuit board CBmay be electrically connected to the display pad electrodes PE-D througha conductive film. For example, the circuit board CB may be attached tothe display panel DP by an anisotropic conductive film (ACF) and may beelectrically connected to the display pad electrodes PE-D.

In an embodiment, the circuit board CB may be a flexible printed circuitboard (FPCB). A printed circuit board (PCB) (not shown) may be attachedto another end of the circuit board CB.

In an embodiment, the display device 10 may further include a drivingcircuit chip (not shown). The driving circuit chip may be mounted on(e.g., directly mounted on) the display panel DP using a chip on plastic(COP) method or a chip on glass (COG) method, or may be mounted on thecircuit board CB attached to the display panel DP using a chip on film(COF) method.

The circuit board CB, the printed circuit board, and the driving circuitchip may provide a driving signal to the display panel DP. The drivingsignal may refer to various signals for driving the display panel DP,such as a driving voltage, a gate signal, and/or a data signal.

In an embodiment, the display panel DP may be a flexible display panel.In another embodiment, the display panel DP may be a rigid displaypanel.

In case that the display panel DP is a flexible display panel, thenon-display area NDA may include a bending area (not shown). Forexample, the bending area may be positioned between the display area DAand the pad area PA. For example, the bending area of the display panelDP may be bent such that the pad area PA is positioned below the displayarea DA. Accordingly, dead space (accommodation space) of the displaydevice 10 may be reduced.

FIG. 2 is a schematic plan view illustrating an arrangement of pixels ofthe display device of FIG. 1 . Specifically, FIG. 2 is a plan viewillustrating four pixels PX arranged in two rows and two columns amongmultiple pixels PX of the display device 10.

Referring to FIGS. 1 and 2 , according to an embodiment, a size of thethird sub pixel SPX3 in plan view may be larger than a size of the firstsub pixel SPX1 in plan view and a size of the second sub pixel SPX2 inplan view. The size of the second sub pixel SPX2 in plan view may begreater than the size of the first sub pixel SPX1 in pan view. However,the disclosure is not necessarily limited thereto.

In an embodiment, when viewed from the third direction D3, each of thefirst sub pixel SPX1 and the second sub pixel SPX2 may be disposed on aside of each of the pixels PX, the third sub pixel SPX3 may be disposedon another side of each of the pixels PX. For example, when viewed inthe third direction D3, the first sub pixel SPX1 may be disposed on theupper left side of each of the pixels PX, the second sub pixel SPX2 maybe disposed on the right upper side of each of the pixels PX, the thirdsub-pixel SPX3 may be disposed on the lower side of each of the pixelsPX. However, the disclosure is not necessarily limited thereto.

The display panel DP may include light blocking patterns LS that extendin the first direction D1 and are spaced apart from each other in thesecond direction D2. In other words, each of the light blocking patternsLS may be disposed in parallel with a side of each of the first to thirdsub pixels SPX1, SPX2, and SPX3. In an embodiment, some of the lightblocking patterns LS may be disposed to overlap the first to third subpixels SPX1, SPX2, and SPX3 in plan view, and others of the lightblocking patterns LS may be disposed to be spaced apart from the firstto third sub pixels SPX1, SPX2, and SPX3 in plan view. The lightblocking patterns LS may limit the light emission angle of each of thefirst to third sub pixels SPX1, SPX2, and SPX3. Accordingly, the viewingangle of the display device 10 may be controlled.

FIG. 3 is a schematic cross-sectional view taken along line I-I′ of FIG.1 .

Referring to FIGS. 1 to 3 , in an embodiment, the display panel DP mayinclude a substrate SUB, a buffer layer BFR, a thin film transistor TR,a light emitting device LED, a thin film encapsulation layer TFE, aprotective film PF, a light transmitting film LTF, a transparentinorganic film pattern TIP, the light blocking pattern LS, a displaytransmission line TL-D, and the display pad electrode PE-D. The thinfilm transistor TR and the light emitting device LED may be disposed inthe display area DA on the substrate SUB. The thin film transistor TRmay include an active layer AL, a gate electrode GE, a source electrodeSE, and a drain electrode DE. The light emitting device LED may includean anode electrode AE, an emission layer EL, and a cathode electrode CE.The display pad electrode PE-D may be disposed in the pad area PA on thesubstrate SUB.

The substrate SUB may be an insulating substrate formed of a transparentor opaque material. In an embodiment, the substrate SUB may includeglass. The display panel DP may be a rigid display panel. In anotherembodiment, the substrate SUB may include plastic. The display panel DPmay be a flexible display panel.

The buffer layer BFR may be disposed on the substrate SUB. The bufferlayer BFR may prevent impurities from diffusing from the substrate SUBto the active layer AL. The buffer layer BFR may include an inorganicinsulating material such as a silicon compound or a metal oxide.Examples of the inorganic insulating material that can be used for thebuffer layer BFR may include silicon oxide (SiO), silicon nitride (SiN),silicon oxynitride (SiON), silicon oxycarbide (SiOC), siliconcarbonitride (SiCN), aluminum oxide. (AlO), aluminum nitride (AlN),tantalum oxide (TaO), hafnium oxide (HfO), zirconium oxide (ZrO),titanium oxide (TiO), or the like. These may be used alone or incombination with each other. The buffer layer BFR may have asingle-layer structure or a multi-layer structure including multipleinsulating layers. In an embodiment, the buffer layer BFR may beentirely disposed in the display area DA and the non-display area NDA onthe substrate SUB.

The active layer AL may be disposed on the buffer layer BFR. The activelayer AL may include an oxide semiconductor, a silicon semiconductor, anorganic semiconductor, or the like. For example, the oxide semiconductormay include indium (In), gallium (Ga), tin (Sn), zirconium (Zr),vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), and/orchromium. The oxide semiconductor may include at least one oxide of(Cr), titanium (Ti), and zinc (Zn). The silicon semiconductor mayinclude amorphous silicon, polycrystalline silicon, or the like. Theactive layer AL may include a source area, a drain area, and a channelarea positioned between the source area and the drain area.

A gate insulating layer GI may be disposed on the active layer AL. Thegate insulating layer GI may cover the active layer AL on the bufferlayer BFR. In an embodiment, the gate insulating layer GI may beentirely disposed in the display area DA and the non-display area NDA onthe buffer layer BFR. The gate insulating layer GI may include aninorganic insulating material

The gate electrode GE may be disposed on the gate insulating layer GI.The gate electrode GE may overlap the channel area of the active layerAL. The gate electrode GE may include a conductive material such as ametal, an alloy, a conductive metal nitride, a conductive metal oxide,and/or a transparent conductive material. Examples of the conductivematerial that may be used for the gate electrode GE may include gold(Au), silver (Ag), aluminum (Al), platinum (Pt), nickel (Ni), titanium(Ti), and palladium (Pd), magnesium (Mg), calcium (Ca), lithium (Li),chromium (Cr), tantalum (Ta), tungsten (W), copper (Cu), molybdenum(Mo), scandium (Sc), neodymium (Nd), iridium (Ir), alloy containingaluminum, alloy containing silver, alloy containing copper, alloycontaining molybdenum, aluminum nitride (AlN), tungsten nitride (WN),titanium nitride (TiN), chromium nitride (CrN), tantalum nitride (TaN),strontium ruthenium oxide (SrRuO), zinc oxide (ZnO), indium tin oxide(ITO), tin oxide (SnO), indium oxide (InO), gallium oxide (GaO), indiumzinc oxide (IZO), and the like. These may be used alone or incombination with each other. The gate electrode GE may have asingle-layer structure or a multi-layer structure including multipleconductive layers.

An interlayer insulating layer ILD may be disposed on the gate electrodeGE. The interlayer insulating layer ILD may cover the gate electrode GEon the gate insulating layer GI. In an embodiment, the interlayerinsulating layer ILD may be entirely disposed in the display area DA andthe non-display area NDA on the gate insulating layer GI. The interlayerinsulating layer ILD may include an inorganic insulating material.

The source electrode SE and the drain electrode DE may be disposed onthe interlayer insulating layer ILD. The source electrode SE may beconnected to the source area and the drain electrode DE may be connectedto the drain area of the active layer AL. Each of the source electrodeSE and the drain electrode DE may include a conductive material. Theactive layer AL, the gate electrode GE, the source electrode SE, and thedrain electrode DE may form the thin film transistor TR.

A via insulating layer VIA may be disposed on the source electrode SEand the drain electrode DE. The via insulating layer VIA may include anorganic insulating material. Examples of the organic insulating materialthat can be used for the via insulating layer VIA may includephotoresist, polyacryl-based resin, polyimide-based resin,polyamide-based resin, siloxane-based resin, acryl-based resin,epoxy-based resin, and the like. These may be used alone or incombination with each other. In an embodiment, the via insulating layerVIA may be disposed in the display area DA on the interlayer insulatinglayer ILD.

The anode electrode AE may be disposed on the via insulating layer VIA.The anode electrode AE may include a conductive material. The anodeelectrode AE may be connected to the drain electrode DE through acontact hole formed in the via insulating layer VIA. Accordingly, theanode electrode AE may be electrically connected to the thin filmtransistor TR.

A pixel defining layer PDL may be disposed on the anode electrode AE.The pixel defining layer PDL may cover a peripheral portion of the anodeelectrode AE and define a pixel opening exposing a central portion ofthe anode electrode AE. The pixel defining layer PDL may include anorganic insulating material. In an embodiment, the pixel defining layerPDL may be disposed in the display area DA on the via insulating layerVIA.

The emission layer EL may be disposed on the anode electrode AE. Theemission layer EL may be disposed in the pixel opening of the pixeldefining layer PDL. The emission layer EL may include at least one of anorganic light emitting material and quantum dots.

In an embodiment, the organic light emitting material may include a lowmolecular weight organic compound or a high molecular weight organiccompound. Examples of the low molecular weight organic compound mayinclude copper phthalocyanine, diphenylbenzidine(N,N′-diphenylbenzidine), tris-(8-hydroxyquinoline)aluminum, and thelike. Examples of the polymer organic compound may includepolyethylenedioxythiophene (poly(3,4-ethylenedioxythiophene),polyaniline, poly-phenylenevinylene, polyfluorene, etc. These may beused alone or in combination with each other.

In an embodiment, the quantum dots may include a core including a groupII-VI compound, a group III-V compound, a group IV-VI compound, a groupIV element, a group IV compound, and combinations thereof. In anembodiment, the quantum dots may have a core-shell structure includingthe core and a shell surrounding the core. The shell may serve as aprotective layer for maintaining semiconductor properties by preventingchemical modification of the core and as a charging layer for impartingelectrophoretic properties to the quantum dots.

The cathode electrode CE may be disposed on the emission layer EL. Thecathode electrode CE may also be disposed on the pixel defining layerPDL. The cathode electrode CE may include a conductive material. In anembodiment, between the anode electrode AE and the cathode electrode CE,various light emitting functional layers such as a hole injection layer(HIL), a hole transporting layer (HTL), an electron transporting layer(ETL), an electron injection layer (EIL) may be disposed. The anodeelectrode AE, the emission layer EL, and the cathode electrode CE mayform a light emitting device LED.

The thin film encapsulation layer TFE may be disposed on the cathodeelectrode CE. The thin film encapsulation layer TFE may cover the lightemitting device LED. The thin film encapsulation layer TFE mayencapsulate the display area DA to protect the light emitting device LEDfrom external impurities.

The thin film encapsulation layer TFE may include at least one inorganicencapsulation layer and at least one organic encapsulation layer. In anembodiment, the thin film encapsulation layer TFE may include a firstinorganic encapsulation layer IL1 disposed on the cathode electrode CE,an organic encapsulation layer OL disposed on the first inorganicencapsulation layer ILL and a second inorganic encapsulation layer IL2disposed on the organic encapsulation layer OL.

Each of the first inorganic encapsulation layer IL1 and the secondinorganic encapsulation layer IL2 may include an inorganic insulatingmaterial. For example, each of the first inorganic encapsulation layerIL1 and the second inorganic encapsulation layer IL2 may include asilicon compound such as silicon oxide, silicon nitride, and/or siliconoxynitride.

The organic encapsulation layer OL may include an organic insulatingmaterial. For example, the organic encapsulation layer OL may be formedby an inkjet method for discharging an ink or a solution containing anorganic material.

In an embodiment, the display panel DP may further include a dam partDAM disposed in the non-display area NDA on the substrate SUB. The dampart DAM may be disposed in the non-display area NDA between the displayarea DA and the pad area PA. In case that the organic encapsulationlayer OL is formed by an inkjet method for discharging ink or a solutioncontaining an organic material, the dam portion DAM may prevent theorganic material from overflowing in the edge direction of the substrateSUB (e.g., the right direction in FIG. 3 ). For example, the dam partDAM may have a shape surrounding the display area DA in plan view. In anembodiment, the dam part DAM may be formed simultaneously with the pixeldefining layer PDL, but the disclosure is not limited thereto. Also,although only one dam part DAM which is a single layer is illustrated inFIG. 3 , the disclosure is not limited thereto. For example, the dampart DAM may have a multilayer structure. The display panel DP mayinclude multiple dam parts DAM.

In an embodiment, each of the first inorganic encapsulation layer IL1and the second inorganic encapsulation layer IL2 may extend from thedisplay area DA to an area between the display area DA and the pad areaPA (e.g., a portion of the non-display area NDA adjacent to the displayarea DA). In an embodiment, each of the first inorganic encapsulationlayer IL1 and the second inorganic encapsulation layer IL2 may cover thedam part DAM. Each of the first inorganic encapsulation layer IL1 andthe second inorganic encapsulation layer IL2 may be spaced apart fromthe pad area PA. In other words, an end of the first inorganicencapsulation layer IL1 adjacent to the pad area PA and an end of thesecond inorganic encapsulation layer IL2 adjacent to the pad area PA maybe positioned between the dam part DAM and the pad area PA,respectively. For example, the end of the first inorganic encapsulationlayer IL1 adjacent to the pad area PA and the end of the secondinorganic encapsulation layer IL2 adjacent to the pad area PA may bepositioned at a boundary of the pad area PA, respectively.

The protective film PF may be disposed on the thin film encapsulationlayer TFE. In an embodiment, the protective film PF may extend from thedisplay area DA to an area between the display area DA and the pad areaPA (e.g., a portion of the non-display area NDA adjacent to the displayarea DA). In an embodiment, the protective film PF may cover the dampart DAM. Also, the protective film PF may be spaced apart from the padarea PA. In other words, an end of the protective film PF adjacent tothe pad area PA may be positioned between the dam part DAM and the padarea PA. For example, the end of the protective film PF adjacent to thepad area PA may be positioned at a boundary of the pad area PA.

In an embodiment, the protective film PF may include an inorganicmaterial. Examples of the inorganic material that can be used for theprotective film PF may include silicon oxide (SiO), silicon nitride(SiN), silicon oxynitride (SiON), and the like. These may be used aloneor in combination with each other. Specifically, the protective film PFmay include silicon nitride (SiN). The protective film PF may have asingle-layer structure or a multi-layer structure including multipleinsulating layers.

The light transmitting film LTF may be disposed on the protective filmPF. In an embodiment, the light transmitting film LTF may include anorganic insulating material. Examples of the organic insulating materialthat can be used for the light transmitting film LTF may includephotoresist, polyacryl-based resin, polyimide-based resin,polyamide-based resin, a siloxane-based resin, an acryl-based resin, anepoxy-based resin, and the like. These may be used alone or incombination with each other. The light transmitting film LTF maytransmit light emitted from each of the first to third sub pixels SPX1,SPX2, and SPX3.

In an embodiment, the light transmitting film LTF may define multipleopenings OP. The openings OP may expose a portion of the protective filmPF. For example, the openings OP may be formed by forming a transparentinorganic film pattern TIP on a preliminary light transmitting film, andetching the preliminary light transmitting film using the transparentinorganic film pattern TIP as a mask. In other words, the preliminarylight transmitting film may be etched according to a shape of thetransparent inorganic film pattern TIP. Accordingly, each of theopenings OP may be spaced apart from the transparent inorganic filmpattern TIP in plan view. This will be described in more detail laterwith reference to FIGS. 6 and 7 .

In an embodiment, for a same etching process, an etch rate of theprotective film PF may be lower than an etch rate of the preliminarylight transmitting film. In other words, the etch rate of the protectivefilm PF may be lower than the etch rate of the light transmitting filmLTF. For example, for the process of forming the openings OP by etchingthe preliminary light transmitting film using the transparent inorganicfilm pattern TIP as a mask, the etch rate of the protective film PF maybe lower than the etch rate of the preliminary light transmitting film.

The transparent inorganic film pattern TIP may be disposed on the lighttransmitting film LTF. The transparent inorganic film pattern TIP maytransmit light emitted from each of the first to third sub pixels SPX1,SPX2, and SPX3 together with the light transmitting film LTF. Examplesof the material that can be used for the transparent inorganic filmpattern TIP may include indium tin oxide (ITO), indium zinc oxide (IZO),and the like. These may be used alone or in combination with each other.As described above, the transparent inorganic film pattern TIP may beused as a mask in the process of forming the openings OP by etching thelight transmitting film LTF. Accordingly, the transparent inorganic filmpattern TIP may be disposed to be spaced apart from the openings OP inplan view.

The light blocking patterns LS may be disposed on the protective filmPF. Each of the light blocking patterns LS may be disposed to fill theopenings OP. In other words, the light transmitting film LTF mayfunction as a mold for determining each of the light blocking patternsLS. Accordingly, each of the light blocking patterns LS may besurrounded by the light transmitting film LTF in plan view. In otherwords, side surfaces of each of the light blocking patterns LS may facea side surface of the light transmitting film LTF.

In an embodiment, an upper end of each of the light blocking patterns LSmay be disposed on the same plane as an upper end of the transparentinorganic film pattern TIP. In other words, in the process of formingthe light blocking patterns LS, portions formed higher than thetransparent inorganic film pattern TIP may be removed. For example, theupper end of each of the light blocking patterns LS may be planarizedbased on the upper end of the transparent inorganic film pattern TIPthrough a polishing process. Examples of the polishing process mayinclude a chemical mechanical polishing process, but the disclosure isnot limited thereto. This will be described in more detail later withreference to FIGS. 9 and 10 . In an embodiment, an upper surface of eachof the light blocking patterns LS may have a concave shape in themiddle.

The light blocking patterns LS may absorb or block light emitted fromeach of the first to third sub pixels SPX1, SPX2, and SPX3. Accordingly,the light blocking patterns LS may prevent light emitted from the firstto third sub pixels SPX1, SPX2, and SPX3 from proceeding in a specificdirection. Accordingly, the light blocking patterns LS may control theviewing angle of the display device 10. For example, the light blockingpatterns LS may include a material that absorbs or blocks light emittedfrom each of the first to third sub pixels SPX1, SPX2, and SPX3.Examples of the material that can be used for the light blockingpatterns LS may include black dye, black pigment, carbon black,chromium, and the like. These may be used alone or in combination witheach other.

Referring back to FIG. 3 , the display transmission line TL-D may beelectrically connected to the display pad electrode PE-D. In anembodiment, the display transmission line TL-D may be a fan-out linethat transmits a data signal to a data line disposed in the display areaDA. However, the disclosure is not limited thereto, and the displaytransmission line TL-D may include various lines such as a controltransmission line that transmits a control signal to the gate driver anda power transmission line that transmits a power supply voltage to thelight emitting device LED disposed in the display area DA.

The display transmission line TL-D may include a conductive material. Inan embodiment, the display transmission line TL-D may be formedsimultaneously with the gate electrode GE. However, the disclosure isnot limited thereto, and the display transmission line TL-D may beformed simultaneously with at least one of various conductive layersforming the thin film transistor TR and the light emitting device LEDdisposed in the display area DA. The display transmission line TL-D mayhave a single-layer structure or a multi-layer structure includingmultiple conductive layers.

The display pad electrode PE-D may be disposed in the pad area PA on thesubstrate SUB. The display pad electrode PE-D may be electricallyconnected to the display transmission line TL-D. In an embodiment, thedisplay pad electrode PE-D may be formed simultaneously with the sourceelectrode SE and the drain electrode DE. However, the disclosure is notlimited thereto, and the display pad electrode PE-D may be formedsimultaneously with at least one of various conductive layers formingthe thin film transistor TR and the light emitting device LED disposedin the display area DA. The display pad electrode PE-D may have asingle-layer structure or a multi-layer structure including multipleconductive layers.

FIGS. 4 to 11 are schematic cross-sectional views illustrating anexample of a method of manufacturing the display device of FIG. 1 .

Referring to FIG. 4 , the pixel including the thin film transistor TRand the light emitting device LED, the display transmission line TL-D,the display pad electrode PE-D, the dam part DAM, and the thin filmencapsulation layer TFE may be formed on a substrate SUB.

The substrate SUB may include the display area DA and the non-displayarea NDA. The non-display area NDA may be positioned outside the displayarea DA. For example, the non-display area NDA may surround the displayarea DA in plan view. The non-display area NDA may include the pad areaPA. The pad area PA may be positioned outside the display area DA.

The buffer layer BFR, the active layer AL, the gate insulating layer GI,the gate electrode GE, the interlayer insulating layer ILD, the sourceelectrode SE, the drain electrode, the via insulating layer VIA, theanode electrode AE, the pixel defining layer PDL, the emission layer EL,the cathode electrode CE, and the thin film encapsulation layer TFE maybe sequentially formed in the display area DA on the substrate SUB. Inan embodiment, each of the gate insulating layer GI, the interlayerinsulating layer ILD, and the via insulating layer VIA may be entirelyformed in the display area DA and the non-display area NDA.

The display transmission line TL-D, the display pad electrode PE-D, andthe dam part DAM may be formed in the non-display area NDA on thesubstrate SUB. Specifically, the display pad electrode PE-D may bepositioned in the pad area PA. In an embodiment, the displaytransmission line TL-D may be formed simultaneously with the gateelectrode GE. The display pad electrode PE-D may be formedsimultaneously with the source electrode SE and the drain electrode DE.However, the disclosure is not necessarily limited thereto.

Referring to FIG. 5 , the protective film PF may be formed in thedisplay area DA and the pad area PA on the substrate SUB. For example,the protective film PF may be entirely formed in the display area DA andthe non-display area NDA. Accordingly, the protective film PF may coverthe thin film encapsulation layer TFE and the display pad electrodePE-D. In an embodiment, the protective film PF may be formed using aninorganic material such as silicon oxide (SiO), silicon nitride (SiN),and/or silicon oxynitride (SiON). Specifically, the protective film PFmay be formed using silicon nitride (SiN).

Referring to FIG. 6 , the preliminary light transmitting film LTF-A maybe formed in the display area DA on the substrate SUB. In an embodiment,the preliminary light transmitting film LTF-A may be formed using anorganic insulating material such as a photoresist, polyacrylic resin,polyimide-based resin, polyamide-based resin, a siloxane-based resin, anacryl-based resin, an epoxy-based resin, and/or the like.

Subsequently, the transparent inorganic film pattern TIP may be formedon the preliminary light transmitting film LTF-A. The transparentinorganic film pattern TIP may function as a mask in an etching processof the preliminary light transmitting film LTF-A which will be describedlater. In an embodiment, the transparent inorganic film pattern TIP maybe formed using a transparent oxide such as indium tin oxide (ITO) orindium zinc oxide (IZO).

Subsequently, the metal pattern MP may be formed on the transparentinorganic film pattern TIP. For example, the metal pattern MP may beformed to correspond to the transparent inorganic film pattern TIP inthe display area DA. Accordingly, the metal pattern MP may cover anupper surface of the transparent inorganic film pattern TIP and mayfunction as a mask in the etching process of the preliminary lighttransmitting film LTF-A which will be described later. In an embodiment,the metal pattern MP may be formed using a metal material such asaluminum (Al), molybdenum (Mo), an alloy containing aluminum, or analloy containing molybdenum.

In an embodiment, as shown in FIG. 6 , the metal pattern MP may beformed to extend to the non-display area NDA. For example, the metalpattern MP may be formed to extend to the pad area PA. In other words,the metal pattern MP may be entirely formed in the non-display area NDA.Accordingly, the metal pattern MP may cover an upper surface of theprotective film PF in the non-display area NDA. Accordingly, during theetching process of the preliminary light transmitting film LTF-A whichwill be described later, the protective film PF may be less affected bythe etching process by the metal pattern MP. However, the disclosure isnot necessarily limited thereto, and in another embodiment, the metalpattern may be formed to correspond to the transparent inorganic filmpattern TIP in the display area DA, and not be formed in the non-displayarea NDA.

Referring to FIG. 7 , the openings OP may be formed by etching thepreliminary light transmitting film LTF-A using the transparentinorganic film pattern TIP and the metal pattern MP as a mask. In otherwords, the preliminary light transmitting film LTF-A may be patternedaccording to the pattern of the transparent inorganic film pattern TIPand the metal pattern MP. Accordingly, the light transmitting film LTFdefining the openings OP may be formed. In an embodiment, the openingsOP may be formed by dry etching, but the disclosure is not limitedthereto. The openings OP may expose a portion of the protective film PF.

In an embodiment, in the process of etching the preliminary lighttransmitting film LTF-A, the preliminary light transmitting film LTF-Amay have a first etch rate and the protective film PF may have a secondetch rate lower than the first etch rate. In other words, in case theprocess of etching the preliminary light transmitting film LTF-A isperformed, the protective film PF may not be affected by the etchingprocess. Accordingly, in case the process of etching the preliminarylight transmitting film LTF-A is performed, since the display padelectrode PE-D is covered by the protective film PF, damage due to theetching process may be prevented.

Referring to FIG. 8 , after the light transmitting film LTF defining theopenings OP is formed, the metal pattern MP may be removed. In anembodiment, the metal pattern MP may be removed using wet etching, butthe disclosure is not limited thereto.

Referring to FIG. 9 , a preliminary light blocking pattern LS-A fillingthe openings OP may be formed in the display area DA on the substrateSUB. The preliminary light blocking pattern LS-A may be formed to behigher than the transparent inorganic film pattern TIP. In other words,the preliminary light blocking pattern LS-A may be formed to cover thelight transmitting film LTF and the transparent inorganic film patternTIP while filling the openings OP.

Referring to FIG. 10 , a portion of the preliminary light blockingpattern LS-A formed higher than the transparent inorganic film patternTIP may be removed to form multiple light blocking patterns LS. In otherwords, the upper end of each of the light blocking patterns LS may beplanarized based on the upper end of the transparent inorganic filmpattern TIP through a polishing process. Examples of the polishingprocess may include a chemical mechanical polishing process, but thedisclosure is not limited thereto. Accordingly, each of the lightblocking patterns LS may be disposed in the openings OP. In anembodiment, the upper end of each of the light blocking patterns LS maybe disposed on the same plane as the upper end of the transparentinorganic film pattern TIP. In an embodiment, the upper surface of eachof the light blocking patterns LS may have a concave shape in themiddle.

The light blocking patterns LS may absorb or block light emitted fromthe light emitting device LED. Accordingly, the light blocking patternsLS may prevent the light emitted from the light emitting device LED fromproceeding in a specific direction. Accordingly, the light blockingpatterns LS may control the viewing angle of the display device 10. Forexample, the light blocking patterns LS may be formed using a materialthat absorbs or blocks light emitted from the light emitting device LED.Examples of the material that can be used for the light blockingpatterns LS may include black dye, black pigment, carbon black,chromium, and the like.

Referring to FIG. 11 , in an embodiment, after the light blockingpatterns LS are formed, the protective film PF of the pad area PA may beselectively removed to expose the display pad electrode PE-D. In anembodiment, the protective film PF of the pad area PA may be selectivelyremoved by a whole surface etching process. However, the disclosure isnot necessarily limited thereto, and in another embodiment, after thepreliminary light blocking patterns LS-A are formed, before removing theportion formed higher than the transparent inorganic film pattern TIPamong the preliminary light blocking pattern LS-A, the protective filmPF of the pad area PA may be selectively removed.

As shown in FIG. 11 , the protective film PF may extend from the displayarea DA to an area between the display area DA and the pad area PA(e.g., a portion of the non-display area NDA adjacent to the displayarea DA). Also, the protective film PF may be spaced apart from the padarea PA. For example, the end of the protective film PF adjacent to thepad area PA may be positioned at the boundary of the pad area PA.However, the disclosure is not limited thereto, and if the display padelectrode PE-D can be exposed, the position of the end of the protectivefilm PF in the non-display area NDA may vary.

According to embodiments, the light blocking patterns LS for controllingthe viewing angle may be internalized in the display panel DP.Accordingly, power consumption of the display panel DP may be reduced, athickness of the display panel DP may be reduced, and a manufacturingcost of the display panel DP may be reduced.

Also, in case that the light transmitting film LTF is formed using anetching process to internalize the light blocking patterns LS in thedisplay panel DP, the pad electrodes may be covered by the protectivefilm PF. Accordingly, damage to the pad electrodes due to the etchingprocess may be prevented. Accordingly, the reliability of the displaydevice may be improved.

FIG. 12 is a schematic plan view illustrating a display device accordingto another embodiment, and FIG. 13 is a schematic cross-sectional viewtaken along line II-Ir of FIG. 12 .

Referring to FIGS. 12 and 13 , the display device 20 according toanother embodiment may be substantially the same as the display device10 described above with reference to FIGS. 1 to 3 , except for a sensinglayer SL, a second dam part DAM2, a touch transmission line TL-T, and atouch pad electrode PE-T.

In an embodiment, the display panel DP may include the sensing layer SLdisposed in the display area DA on the substrate SUB. The sensing layerSL may be disposed on the thin film encapsulation layer TFE. In anembodiment, the sensing layer SL may include a first touch electrodeTE1, a first touch insulating layer TI1, a second touch electrode TE2,and a second touch insulating layer TI2.

The first touch electrode TE1 may be disposed on the thin filmencapsulation layer TFE. In an embodiment, the first touch electrode TE1may be disposed to overlap the pixel defining layer PDL in plan view.The first touch electrode TE1 may be formed of a metal, an alloy, aconductive metal oxide, a transparent conductive material, or the like.

The first touch insulating layer TI1 may be disposed on the thin filmencapsulation layer TFE on which the first touch electrode TE1 isdisposed. The first touch insulating layer TI1 may cover the first touchelectrode TE1. The first touch insulating layer TI1 may include aninorganic insulating material. Examples of the inorganic insulatingmaterial that can be used as the first touch insulating layer TI1 mayinclude silicon oxide, silicon nitride, silicon oxynitride, and thelike. These may be used alone or in combination with each other.

The second touch electrode TE2 may be disposed on the first touchinsulating layer TI1 and overlap the first touch electrode TE1. Thesecond touch electrode TE2 may be electrically connected to the firsttouch electrode TE1 through a contact hole formed in the first touchinsulating layer TI1. The second touch electrode TE2 may include ametal, an alloy, a conductive metal oxide, a transparent conductivematerial, or the like.

The first touch electrode TE1 and the second touch electrode TE2 mayconstitute a touch electrode. In an embodiment, the touch electrode mayhave a mesh structure in plan view. However, the disclosure is notnecessarily limited thereto, and the touch electrode may have variousshapes.

The second touch insulating layer TI2 may be disposed on the first touchinsulating layer TI1 on which the second touch electrode TE2 isdisposed. The second touch insulating layer TI2 may cover the secondtouch electrode TE2. The second touch insulating layer TI2 may includean organic insulating material. Examples of the organic insulatingmaterial that can be used as the second touch insulating layer TI2 mayinclude photoresist, polyacryl-based resin, polyimide-based resin, andpolyamide-based resin, siloxane-based resin, acryl-based resin,epoxy-based resin, and the like. These may be used alone or incombination with each other. In an embodiment, the second touchinsulating layer TI2 may be formed by an inkjet method for dischargingink or a solution including an organic insulating material. The secondtouch insulating layer TI2 may have a substantially flat top surface.

In an embodiment, the display panel DP may include a first dam part DAM1and a second dam part DAM2 disposed in the non-display area NDA on thesubstrate SUB. The first dam part DAM1 may be substantially the same asthe dam part DAM described with reference to FIG. 3 .

The second dam part DAM2 may be disposed in the non-display area NDAbetween the display area DA and the pad area PA. In case that the secondtouch insulating layer TI2 is formed by an inkjet method for dischargingink or a solution including an organic insulating material, the seconddam part DAM2 may prevent the organic insulating material fromoverflowing in the edge direction of the substrate SUB (e.g., the rightdirection in FIG. 13 ). Although the second dam part DAM2 overlaps thefirst dam part DAM1 in the third direction D3 in FIG. 2 , a position ofthe second dam part DAM2 is not necessarily limited thereto. Also,although only one second dam part DAM2 which is a single layer isillustrated in FIG. 13 , the disclosure is not limited thereto. Forexample, the second dam part DAM may have a multilayer structure. Thedisplay panel DP may include multiple second dam parts DAM2. Also, inanother embodiment, the second dam part DAM2 may be omitted. The secondtouch insulating layer TI2 may be entirely formed in the display area DAand the non-display area NDA. For example, the second touch insulatinglayer TI2 may be formed to extend to the pad area PA. Accordingly, thesecond touch insulating layer TI2 may cover the touch pad electrodePE-T.

In an embodiment, as the sensing layer SL is disposed on the thin filmencapsulation layer TFE, the protective film PF may be disposed on thesensing layer SL. For example, the protective film PF may be disposed onthe second touch insulating layer TI2. In an embodiment, the protectivefilm PF may extend from the display area DA to an area between thedisplay area DA and the pad area PA (e.g., a portion of the non-displayarea NDA adjacent to the display area DA). In an embodiment, theprotective film PF may cover the second dam part DAM2. Also, theprotective film PF may be spaced apart from the pad area PA. In otherwords, an end of the protective film PF adjacent to the pad area PA maybe positioned between the second dam part DAM2 and the pad area PA.However, the disclosure is not necessarily limited thereto, and if thetouch pad electrode PE-T can be exposed, the position of the end of theprotective film PF in the non-display area NDA may vary.

In an embodiment, the protective film PF may include an inorganicmaterial. Examples of the inorganic material that can be used for theprotective film PF may include silicon oxide (SiO), silicon nitride(SiN), silicon oxynitride (SiON), and the like. These may be used aloneor in combination with each other. Specifically, the protective film PFmay include silicon nitride (SiN). The protective film PF may have asingle-layer structure or a multi-layer structure including multipleinsulating layers.

The touch transmission line TL-T may be electrically connected to thetouch pad electrode PE-T. In an embodiment, the touch transmission lineTL-T may be a fan-out line that transmits a touch signal to a touchsignal line disposed in the display area DA. However, the disclosure isnot limited thereto, and the touch transmission line TL-T may be formedsimultaneously with at least one of various conductive layers formingthe thin film transistor TR, the light emitting device LED, the firsttouch electrode TE1, and the second touch electrode TE2. The touchtransmission line TL-T may have a single-layer structure or amulti-layer structure including multiple conductive layers.

The touch pad electrode PE-T may be disposed in the pad area PA on thesubstrate SUB. For example, the touch pad electrode PE-T may be disposedin the pad area PA on the substrate SUB together with the display padelectrode PE-D. The touch pad electrode PE-T may be electricallyconnected to the touch transmission line TL-T. In an embodiment, thetouch pad electrode PE-T may be formed simultaneously with at least oneof various conductive layers forming the thin film transistor TR, thelight emitting device LED, the first touch electrode TE1, and the secondtouch electrode TE2. The touch pad electrode PE-T may have asingle-layer structure or a multi-layer structure including multipleconductive layers.

FIGS. 14 to 21 are schematic cross-sectional views illustrating anexample of a method of manufacturing the display device of FIG. 12 .

Referring to FIG. 14 , the pixel including the thin film transistor TRand the light emitting device LED, the touch transmission line TL-T, thetouch pad electrode PE-T, the first dam part DAM, the thin filmencapsulation layer TFE, the second dam part DAM2, and the sensing layerSL may be formed on a substrate SUB.

The substrate SUB may include the display area DA and the non-displayarea NDA. The non-display area NDA may be positioned outside the displayarea DA. For example, the non-display area NDA may surround the displayarea DA in plan view. The non-display area NDA may include the pad areaPA. The pad area PA may be positioned outside the display area DA.

The buffer layer BFR, the active layer AL, the gate insulating layer GI,the gate electrode GE, the interlayer insulating layer ILD, the sourceelectrode SE, the drain electrode, the via insulating layer VIA, theanode electrode AE, the pixel defining layer PDL, the emission layer EL,the cathode electrode CE, the thin film encapsulation layer TFE, and thesensing layer may be sequentially formed in the display area DA on thesubstrate SUB. In an embodiment, each of the gate insulating layer GI,the interlayer insulating layer ILD, and the via insulating layer VIAmay be entirely formed in the display area DA and the non-display areaNDA.

The touch transmission line TL-T, the touch pad electrode PE-T, and thefirst dam part DAM1, and the second dam part DAM2 may be formed in thenon-display area NDA on the substrate SUB. Specifically, the touch padelectrode PE-T may be positioned in the pad area PA.

Referring to FIG. 15 , the protective film PF may be formed in thedisplay area DA and the pad area PA on the substrate SUB. For example,the protective film PF may be entirely formed in the display area DA andthe non-display area NDA. Accordingly, the protective film PF may coverthe sensing layer SL and the touch pad electrode PE-T. In an embodiment,the protective film PF may be formed using an inorganic material such assilicon oxide (SiO), silicon nitride (SiN), and/or silicon oxynitride(SiON). Specifically, the protective film PF may be formed using siliconnitride (SiN).

Referring to FIG. 16 , the preliminary light transmitting film LTF-A maybe formed in the display area DA on the protective film PF. In anembodiment, the preliminary light transmitting film LTF-A may be formedusing an organic insulating material such as a photoresist, polyacrylicresin, polyimide-based resin, polyamide-based resin, a siloxane-basedresin, an acryl-based resin, an epoxy-based resin, and/or the like.

Subsequently, the transparent inorganic film pattern TIP may be formedon the preliminary light transmitting film LTF-A. The transparentinorganic film pattern TIP may function as a mask in an etching processof the preliminary light transmitting film LTF-A which will be describedlater. In an embodiment, the transparent inorganic film pattern TIP maybe formed using a transparent oxide such as indium tin oxide (ITO) orindium zinc oxide (IZO).

Subsequently, the metal pattern MP may be formed on the transparentinorganic film pattern TIP. For example, the metal pattern MP may beformed to correspond to the transparent inorganic film pattern TIP inthe display area DA. Accordingly, the metal pattern MP may cover anupper surface of the transparent inorganic film pattern TIP and mayfunction as a mask in the etching process of the preliminary lighttransmitting film LTF-A which will be described later.

In an embodiment, as shown in FIG. 16 , the metal pattern MP may beformed to extend to the non-display area NDA. For example, the metalpattern MP may be formed to extend to the pad area PA. Accordingly, themetal pattern MP may cover an upper surface of the protective film PF inthe non-display area NDA. Accordingly, during the etching process of thepreliminary light transmitting film LTF-A which will be described later,the protective film PF may be less affected by the etching process bythe metal pattern MP. However, the disclosure is not necessarily limitedthereto, and in another embodiment, the metal pattern may be formed tocorrespond to the transparent inorganic film pattern TIP in the displayarea DA, and not be formed in the non-display area NDA.

Referring to FIG. 17 , the openings OP may be formed by etching thepreliminary light transmitting film LTF-A using the transparentinorganic film pattern TIP and the metal pattern MP as a mask.Accordingly, the light transmitting film LTF defining the openings OPmay be formed. In an embodiment, the openings OP may be formed by dryetching, but the disclosure is not limited thereto. The openings OP mayexpose a portion of the protective film PF.

In an embodiment, in the process of etching the preliminary lighttransmitting film LTF-A, the preliminary light transmitting film LTF-Amay have a first etch rate and the protective film PF may have a secondetch rate lower than the first etch rate. In other words, in case thatthe process of etching the preliminary light transmitting film LTF-A isperformed, the protective film PF may not be affected by the etchingprocess. Accordingly, in case the process of etching the preliminarylight transmitting film LTF-A is performed, since the touch padelectrode PE-T is covered by the protective film PF, damage due to theetching process may be prevented.

Referring to FIG. 18 , after the light transmitting film LTF definingthe openings OP is formed, the metal pattern MP may be removed. In anembodiment, the metal pattern MP may be removed using wet etching, butthe disclosure is not limited thereto.

Referring to FIGS. 19 and 20 , a preliminary light blocking pattern LS-Afilling the openings OP may be formed in the display area DA on thesubstrate SUB. The preliminary light blocking pattern LS-A may be formedto cover the light transmitting film LTF and the transparent inorganicfilm pattern TIP while filling the openings OP. Subsequently, a portionof the preliminary light blocking pattern LS-A formed higher than thetransparent inorganic film pattern TIP may be removed to form lightblocking patterns LS. In other words, the upper end of each of the lightblocking patterns LS may be planarized based on the upper end of thetransparent inorganic film pattern TIP through a polishing process.Accordingly, each of the light blocking patterns LS may be disposed inthe openings OP. In an embodiment, the upper end of each of the lightblocking patterns LS may be disposed on the same plane as the upper endof the transparent inorganic film pattern TIP. In an embodiment, theupper surface of each of the light blocking patterns LS may have aconcave shape in the middle.

Referring to FIG. 21 , in an embodiment, after the light blockingpatterns LS are formed, the protective film PF of the pad area PA may beselectively removed to expose the touch pad electrode PE-T. In anembodiment, the protective film PF of the pad area PA may be selectivelyremoved by a whole surface etching process. However, the disclosure isnot necessarily limited thereto, and in another embodiment, after thepreliminary light blocking patterns LS-A are formed, before removing theportion formed higher than the transparent inorganic film pattern TIPamong the preliminary light blocking pattern LS-A, the protective filmPF of the pad area PA may be selectively removed.

As shown in FIG. 21 , the protective film PF may extend from the displayarea DA to an area between the display area DA and the pad area PA(e.g., a portion of the non-display area NDA adjacent to the displayarea DA). Also, the protective film PF may be spaced apart from the padarea PA. For example, the end of the protective film PF adjacent to thepad area PA may be positioned at the boundary of the pad area PA.However, the disclosure is not limited thereto, and if the touch padelectrode PE-D can be exposed, the position of the end of the protectivefilm PF in the non-display area NDA may vary.

According to embodiments, the light blocking patterns LS for controllingthe viewing angle may be internalized in the display panel DP.Accordingly, power consumption of the display panel DP may be reduced, athickness of the display panel DP may be reduced, and a manufacturingcost of the display panel DP may be reduced.

Also, in case that the light transmitting film LTF is formed using anetching process to internalize the light blocking patterns LS in thedisplay panel DP, the pad electrodes may be covered by the protectivefilm PF. Accordingly, damage to the pad electrodes due to the etchingprocess may be prevented. Accordingly, the reliability of the displaydevice may be improved.

FIG. 22 is a schematic plan view illustrating pixels of a display deviceaccording to still another embodiment.

Referring to FIG. 22 , the display device 30 may be substantially thesame as the display device 10 described above with reference to FIGS. 1to 11 or the display device described above with reference to FIGS. 12to 21 , except for the arrangement of the light blocking patterns LS.

In an embodiment, each of the light blocking patterns LS may be disposedto be spaced apart from the first to third sub pixels SPX1, SPX2, andSPX3 in plan view. Accordingly, the arrangement of the light blockingpatterns LS may be further minimized. Accordingly, a decrease inluminance of the display panel DP may be further minimized.

The disclosure should not be construed as being limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete and will fully conveyconcepts of the disclosure to those skilled in the art.

While the disclosure has been particularly shown and described withreference to embodiments thereof, it will be understood by those ofordinary skill in the art that various changes in form and details maybe made therein without departing from the spirit or scope of thedisclosure.

What is claimed is:
 1. A display device comprising: a substrateincluding a display area and a pad area disposed outside the displayarea in plan view; a plurality of pixels disposed in the display area onthe substrate; at least one display pad electrode disposed in the padarea on the substrate; a thin film encapsulation layer disposed on thedisplay area on the substrate and covering the plurality of pixels; aprotective film disposed on the thin film encapsulation layer andincluding an inorganic material; a light transmitting film disposed onthe protective film and including a plurality of openings exposing aportion of the protective film; and a light blocking pattern that fillseach of the plurality of openings and are disposed on the protectivefilm.
 2. The display device of claim 1, wherein an etch rate of theprotective film is lower than an etch rate of the light transmittingfilm in a same etching process.
 3. The display device of claim 2,wherein the protective film includes at least one of silicon oxide,silicon nitride, and silicon oxynitride.
 4. The display device of claim1, wherein each of the plurality of pixels includes a plurality of subpixels, and the light blocking patterns are spaced apart from theplurality of sub pixels in plan view.
 5. The display device of claim 1,further comprising: a transparent inorganic film pattern disposed in thedisplay area on the light transmitting film and spaced apart from theplurality of openings in plan view.
 6. The display device of claim 5,further comprising: a sensing layer disposed between the thin filmencapsulation layer and the protective film and including at least onetouch electrode; and at least one touch pad electrode disposed in thepad area on the substrate.
 7. A method of manufacturing a displaydevice, the method comprising: forming a pixel in a display area on asubstrate and at least one display pad electrode in a pad area disposedoutside the display area in plan view; forming a thin film encapsulationlayer covering the pixel in the display area on the substrate; forming aprotective film including an inorganic material and covering the thinfilm encapsulation layer and the display pad electrode on the displayarea and the pad area on the substrate; forming a light transmittingfilm including a plurality of openings exposing a portion of theprotective film in the display area on the protective film; and forminga light blocking pattern disposed in each of the plurality of openings.8. The method of claim 7, wherein the forming of the light transmittingfilm includes: forming a preliminary light transmitting film on thedisplay area on the protective film; forming a transparent inorganicfilm pattern on the preliminary light transmitting film; forming a metalpattern covering an upper surface of the transparent inorganic filmpattern and an upper surface of the protective film in the display areaand the pad area on the substrate; and forming the plurality of openingsby etching the preliminary light transmitting film using the transparentinorganic film pattern and the metal pattern as a mask.
 9. The method ofclaim 8, wherein in the etching the preliminary light transmitting filmthe protective film has a first etch rate and the preliminary lighttransmitting film has a second etch rate, and the second etch rate islower than the first etch rate.
 10. The method of claim 9, wherein theprotective film includes at least one of silicon oxide, silicon nitride,and silicon oxynitride.
 11. The method of claim 8, wherein after formingthe plurality of openings, the metal pattern is removed.
 12. The methodof claim 7, wherein after forming the light blocking pattern, theprotective film in the pad area is selectively removed to expose thedisplay pad electrode.
 13. The method of claim 12, wherein theprotective film in the pad area is selectively removed by a wholesurface etching process.
 14. A method of manufacturing a display device,the method comprising: forming a pixel in a display area on a substrateand at least one display pad electrode in a pad area disposed outsidethe display area in plan view; forming a thin film encapsulation layercovering the pixel in the display area on the substrate; forming asensing layer including at least one sensing electrode in the displayarea on the thin film encapsulation layer and at least one touch padelectrode disposed in the pad area; forming a protective film includingan inorganic material and covering the sensing layer, the display padelectrode, and the touch pad electrode on the display area and the padarea on the substrate; forming a light transmitting film including aplurality of openings exposing a portion of the protective film in thedisplay area on the protective film; and forming a light blockingpattern disposed in each of the plurality of openings.
 15. The method ofclaim 14, wherein the forming of the light transmitting film includes:forming a preliminary light transmitting film on the display area on theprotective film; forming a transparent inorganic film pattern on thepreliminary light transmitting film; forming a metal pattern covering anupper surface of the transparent inorganic film pattern and an uppersurface of the protective film in the display area and the pad area onthe substrate; and forming the plurality of openings by etching thepreliminary light transmitting film using the transparent inorganic filmpattern and the metal pattern as a mask.
 16. The method of claim 15,wherein in the etching the preliminary light transmitting film theprotective film has a first etch rate and the preliminary lighttransmitting film has a second etch rate, and the second etch rate islower than the first etch rate.
 17. The method of claim 16, wherein theprotective film includes at least one of silicon oxide, silicon nitride,and silicon oxynitride.
 18. The method of claim 15, wherein afterforming the plurality of openings, the metal pattern is removed.
 19. Themethod of claim 14, wherein after forming the light blocking pattern,the protective film in the pad area is selectively removed to expose thedisplay pad electrode and the touch pad electrode.
 20. The method ofclaim 19, wherein the protective film in the pad area is selectivelyremoved by a whole surface etching process.